RAMMon v1.1 Build: 1002 built with SysInfo v2.1 Build: 1005
PassMark (R) Software
www.passmark.com
Memmory summary for DESKTOP-N3GE4CO:
Number of Memory Devices: 2 Total Physical Memory: 7753 MB (8192 MB)
Total Available Physical Memory: 3415 MB
Memory Load: 55%
Item | Slot #1 | Slot #2 |
-------------------------------------------------------------------------------|------------------------|------------------------|-
Ram Type | DDR3 | DDR3 |
Maximum Clock Speed (MHz) | 800 (JEDEC) | 800 (JEDEC) |
Maximum Transfer Speed (MHz) | DDR3-1600 | DDR3-1600 |
Maximum Bandwidth (MB/s) | PC3-12800 | PC3-12800 |
Memory Capacity (MB) | 4096 | 4096 |
Jedec Manufacture Name | Samsung | Samsung |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.1 | 1.1 |
Registered | No | No |
ECC | No | No |
DIMM Slot # | 1 | 2 |
Manufactured | Week 12 of Year 2012 | Week 12 of Year 2012 |
Module Part # | M471B5273DH0-CK0 | M471B5273DH0-CK0 |
Module Revision | 0x0 | 0x0 |
Module Serial # | 0x7A1DA5 | 0x7A1C6F |
Module Manufacturing Location | 3 | 3 |
# of Row Addressing Bits | 15 | 15 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 8 | 8 |
# of Ranks | 2 | 2 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 64 | 64 |
Module Voltage | 1.5V | 1.5V |
CAS Latencies Supported | 5 6 7 8 9 10 11 | 5 6 7 8 9 10 11 |
Timings @ Max Frequency (JEDEC) | 11-11-11-28 | 11-11-11-28 |
Maximum frequency (MHz) | 800 | 800 |
Maximum Transfer Speed (MHz) | DDR3-1600 | DDR3-1600 |
Maximum Bandwidth (MB/s) | PC3-12800 | PC3-12800 |
Minimum Clock Cycle Time, tCK (ns) | 1.250 | 1.250 |
Minimum CAS Latency Time, tAA (ns) | 13.125 | 13.125 |
Minimum RAS to CAS Delay, tRCD (ns) | 13.125 | 13.125 |
Minimum Row Precharge Time, tRP (ns) | 13.125 | 13.125 |
Minimum Active to Precharge Time, tRAS (ns) | 35.000 | 35.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 6.000 | 6.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 48.125 | 48.125 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 160.000 | 160.000 |
| | |
DDR3 Specific SPD Attributes | | |
Write Recovery Time, tWR (ns) | 15.000 | 15.000 |
Internal Write to Read Command Delay, tWTR (ns) | 7.500 | 7.500 |
Internal Read to Precharge Command Delay, tRTP (ns) | 7.500 | 7.500 |
Minimum Four Activate Window Delay, tFAW (ns) | 30.000 | 30.000 |
Maximum Activate Window in units of tREFI | 0 | 0 |
RZQ / 6 Supported | Yes | Yes |
RZQ / 7 Supported | Yes | Yes |
DLL-Off Mode Supported | Yes | Yes |
Maximum Operating Temperature Range (C) | 0-95 | 0-95 |
Refresh Rate at Extended Operating Temperature Range | 2X | 2X |
Auto-self Refresh Supported | No | No |
On-die Thermal Sensor Readout Supported | No | No |
Partial Array Self Refresh Supported | No | No |
Thermal Sensor Present | No | No |
Non-standard SDRAM Type | Standard Monolithic | Standard Monolithic |
Maxium Activate Count (MAC) | | |
Module Type | SO-DIMM | SO-DIMM |
Module Height (mm) | 30 | 30 |
Module Thickness (front), (mm) | 2 | 2 |
Module Thickness (back), (mm) | 2 | 2 |
Module Width (mm) | 67.6 | 67.6 |
Reference Raw Card Used | Raw Card F Rev. 3 | Raw Card F Rev. 3 |
DRAM Manufacture | Samsung | Samsung |
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